Description
Specifications
– Laser type – Semiconductor laser/Ga Al As
– Laser probe
– 810nm – 300 mW pointed (module)
– 650nm – 40mW pointed (module)
– 650nm – 200mW cluster (diode)
– Treatment time – 0 – 60 mins
– Laser classification – Class 3B according to
– IEC – 60825 – 1
– Mains voltage – 90 – 270V / 50 or 60 Hz
– Dimensions – L x B x H – 28 x 22 x 9 cms
– Weight – 2.5 Kgs
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